LONDON, Nov. 20 (Xinhua) -- New molecules could be the key to solving a looming problem with flash memory storage, researchers said in a new report published in the latest issue of Nature.
Flash memory is a popular form of electronic data storage. However, there is a physical limit to the minimum size of the current design of data cells, which currently use metal-oxide-semiconductor (MOS) components. Because MOS is difficult to manufacture at a scale below 10 nanometres.
Scientists have previously suggested that using individual molecules to replace conventional data-storage components in flash memory could help solve the problem. However, attempts to design these molecules have faced practical barriers such as low thermal stability and high resistance.
A team from the University of Glasgow in Scotland and Rovira i Virgili University in Spain have developed a possible solution using metal-oxide clusters known as polyoxometalates (POMs).
"Conventional flash memory uses transistors whose design allows them to 'remember' whether they have been turned on or off after they've been removed from a power source." Scottish professor and lead author Lee Cronin said, "Those transistors' positions correspond to binary, allowing data to be stored."
"We've been able to design, synthesise and characterize POM molecules that can trap charge and act as flash RAM, as well as dope the inner core of the clusters with selenium to create a new type of memory we call 'write-once-erase'."
According to researchers, the POM clusters provide a balance of structural stability and electronic activity and their electronic functionality is tunable, making them suitable as storage nodes for flash memory. Editor: Mu Xuequan